Datasheet > AM3445P

AM3445P

更新时间： 2024-09-15 07:16:55

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	221K
描述
P-Channel 20-V (D-S) MOSFET

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AM3445P 数据手册

Analog Power

AM3445P

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r_DS(on)and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

-5.6

0.038 @ V_GS= -4.5V

0.054 @ V_GS= -2.5V

0.072 @ V_GS= -1.8V

-20

-4.8

-4.0

computers, printers, PCMCIA cards,

cellular and cordless telephones.

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

T_A=25^oC

T_A=70^oC

-5.6

-4.5

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

-1.7

2.0

T_A=25^oC

T_A=70^oC

P_D

1.3

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

R_THJA62.5

Maximum Junction-to-Ambient^a

^oC/W

t <= 5 sec

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3445_B

PRELIMINARY

12 3 4 5

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