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AM3438NE PDF预览

AM3438NE

更新时间: 2024-09-15 07:16:55
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
5页 249K
描述
N-Channel Logic Level MOSFET

AM3438NE 数据手册

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Analog Power  
AM3438NE  
N-Channel Logic Level MOSFET  
These miniature surface mount MOSFETs  
utilize a high cell density trench process to  
provide low rDS(on) and to ensure minimal  
power loss and heat dissipation. Typical  
applications are DC-DC converters and power  
management in portable and battery-powered  
products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
ID (A)  
0.027 @ VGS = 10 V  
0.04 @ VGS = 4.5V  
6.3  
5.5  
30  
1
2
3
6
5
4
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
TSOP-6 saves board space  
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
20  
V
TA=25oC  
TA=70oC  
6.3  
5.2  
20  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
1.3  
1.6  
1.0  
A
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
RTHJA 78.0  
Maximum Junction-to-Ambienta  
oC/W  
t <= 5 sec  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM3438NE_B  
PRELIMINARY  

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