Datasheet > AM3456NE

AM3456NE

更新时间： 2024-09-15 12:26:43

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	211K
描述
N-Channel 30V (D-S) MOSFET

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AM3456NE 数据手册

Analog Power

AM3456NE

N-Channel 30V (D-S) MOSFET

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r_DS(on)and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

PRODUCT SUMMARY

V (V)

r_DS(on)(Ω)

I_D(A)

5.3

4.5

0.032 @V = 10 V

0.044 @V = 4.5V

computers, printers, PCMCIA cards,

cellular and cordless telephones.

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

High performance trench technology

ESD Protected

2000V

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_A=25^oC

T_A=70^oC

5.5

4.4

±20

1.3

2.0

1.3

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

62.5

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3456NE_A

PRELIMINARY

12 3

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