Datasheet > AM3447P

AM3447P

更新时间： 2024-09-15 12:26:43

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描述
P-Channel 40-V (D-S) MOSFET

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AM3447P 数据手册

Analog Power

AM3447P

P-Channel 40-V (D-S) MOSFET

PRODUCT SUMMARY

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r_DS(on)and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.070 @ V_GS= -10V

0.090 @ V_GS= -4.5V

-4.4

-3.9

-40

computers, printers, PCMCIA cards,

cellular and cordless telephones.

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-40

±20

T_A=25^oC

T_A=70^oC

-4.0

-3.2

±20

-1.7

2.0

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

^oC

T_A=25^oC

T_A=70^oC

Power Dissipation^a

P_D

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

^oC/W

t <= 5 sec

62.5

Maximum Junction-to-Ambient^a

R_THJA

^oC/W

110

Steady state

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3447_A

PRELIMINARY

12 3

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