Datasheet > AM3415AE3R

AM3415AE3R

更新时间： 2024-09-14 01:15:31

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
9页	838K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AM3415AE3R 数据手册

AM3415A

MOSFET

AiT Semiconductor Inc.

www.ait-ic.com

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM3415A uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as1.8V. This

device is suitable for use as a load switch or in PWM

applications .It is ESD protested.



V_DS= -20V,I_D=-4A

R_DS(ON)< 60mΩ @ V_GS=-2.5V

R_DS(ON)< 47mΩ @ V_GS=-4.5V

ESD Rating: 2500V HBM



High Power and current handing capability

Lead free product is acquired

Surface mount package

The AM3415A is available in SOT-23 package.

Available in SOT-23 Package

ORDERING INFORMATION

APPLICATION



PWM application

Load switch

Package Type

SOT-23

Part Number

AM3415AE3R

AM3415AE3VR

TYPICAL APPLICATION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Suffix “ V “ means Halogen free Package

Schematic diagram

REV1.0

- JAN 2014 RELEASED -

- 1 -

12 3 4 5 6 7...9

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