生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | 11 X 12 MM, 0.80 MM PITCH, FBGA-63 | 针数: | 63 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.46 |
Is Samacsys: | N | 最长访问时间: | 90 ns |
JESD-30 代码: | R-PBGA-B63 | JESD-609代码: | e1 |
长度: | 12 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 63 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 编程电压: | 3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN SILVER COPPER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 类型: | NOR TYPE |
宽度: | 11 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AM29LV065MU90WHI | AMD |
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64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt- | |
AM29LV065MU90WHI | SPANSION |
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Flash, 8MX8, 90ns, PBGA63, 11 X 12 MM, 0.80 MM PITCH, FBGA-63 | |
AM29LV081 | AMD |
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8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100EC | AMD |
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8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100ECB | AMD |
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8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100EE | AMD |
获取价格 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100EEB | AMD |
获取价格 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100EI | AMD |
获取价格 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100EIB | AMD |
获取价格 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |
AM29LV081-100FC | AMD |
获取价格 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |