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AM29LV065MU90WHI PDF预览

AM29LV065MU90WHI

更新时间： 2024-09-21 19:58:39
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
8页 104K
描述
Flash, 8MX8, 90ns, PBGA63, 11 X 12 MM, 0.80 MM PITCH, FBGA-63

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AM29LV065MU90WHI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：11 X 12 MM, 0.80 MM PITCH, FBGA-63
针数：63Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.46Is Samacsys：N
最长访问时间：90 nsJESD-30 代码：R-PBGA-B63
JESD-609代码：e0长度：12 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：63
字数：8388608 words字数代码：8000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8MX8
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：TIN LEAD
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
类型：NOR TYPE宽度：11 mm
Base Number Matches：1

AM29LV065MU90WHI 数据手册

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ADVANCE INFORMATION  
Am29LV065M  
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
— 8-byte read page buffer  
— 32-byte write buffer  
■ Single power supply operation  
■ Low power consumption (typical values at 3.0 V,  
— 2.7–3.6 volt read, erase, and program operations  
5 MHz)  
■ Enhanced VersatileI/O control  
— 30 mA typical active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
— Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin; operates from 1.65 to 3.6 V  
■ Package options  
— 48-pin TSOP  
■ Manufactured on 0.23 µm MirrorBit process  
technology  
— 63-ball FBGA  
■ SecSi (Secured Silicon) Sector region  
— 256-byte sector for permanent, secure identification  
through an 16-byte random Electronic Serial Number,  
accessible through a command sequence  
SOFTWARE & HARDWARE FEATURES  
■ Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— May be programmed and locked at the factory or by  
the customer  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
■ Flexible sector architecture  
— One hundred twenty-eight 64 Kbyte sectors  
— Data# polling & toggle bits provide status  
■ Compatibility with JEDEC standards  
— Unlock Bypass Program command reduces overall  
multiple-byte programming time  
— Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
■ Minimum 100,000 erase cycle guarantee per sector  
■ 20-year data retention at 125°C  
■ Hardware features  
— Sector Group Protection: hardware method of  
preventing write operations within a sector group  
PERFORMANCE CHARACTERISTICS  
■ High performance  
— Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
— 90 ns access time  
— ACC (high voltage) pin accelerates programming  
time for higher throughput during system production  
— 25 ns page read times  
— 1 s typical sector erase time  
— Hardware reset pin (RESET#) resets device  
— 3.0 µs typical write buffer byte programming time:  
32-byte write buffer reduces overall programming  
time for multiple-byte updates  
— Ready/Busy# pin (RY/BY#) detects program or erase  
cycle completion  
Publication# 25262  
Issue Date: August 3, 2001  
Rev: A Amendment/0  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  
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