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ADS58B18_11 PDF预览

ADS58B18_11

更新时间: 2024-11-07 08:19:55
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德州仪器 - TI /
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68页 1093K
描述
11-Bit, 200MSPS/9-Bit, 250MSPS, Ultralow-Power ADCs with Analog Buffer

ADS58B18_11 数据手册

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ADS58B18  
ADS58B19  
www.ti.com  
SBAS487D NOVEMBER 2009REVISED JANUARY 2011  
11-Bit, 200MSPS/9-Bit, 250MSPS,  
Ultralow-Power ADCs with Analog Buffer  
Check for Samples: ADS58B18, ADS58B19  
1
FEATURES  
DESCRIPTION  
23  
ADS58B18: 11-Bit, 200MSPS  
The ADS58B18/B19 are members of the ultralow  
power ADS4xxx analog-to-digital converter (ADC)  
family that features integrated analog buffers and  
SNRBoost technology. The ADS58B18 and  
ADS58B19 are 11-bit and 9-bit ADCs with sampling  
rates up to 200MSPS and 250MSPS, respectively.  
Innovative design techniques are used to achieve  
high dynamic performance while consuming  
extremely low power. The analog input pins have  
buffers with constant performance and input  
impedance across a wide frequency range. This  
architecture makes these parts well-suited for  
ADS58B19: 9-Bit, 250MSPS  
Integrated High-Impedance Analog Input  
Buffer  
Ultralow Power:  
Analog Power: 258mW at 200MSPS  
I/O Power: 69mW (DDR LVDS, low LVDS  
swing)  
High Dynamic Performance:  
ADS58B18: 66dBFS SNR and 81dBc SFDR  
at 150MHz  
multi-carrier,  
wide  
bandwidth  
communications  
applications such as PA linearization.  
ADS58B19: 55.7dBFS SNR and 76dBc  
SFDR at 150MHz  
The ADS58B18 uses TI-proprietary SNRBoost  
technology that can be used to overcome SNR  
Enhanced SNR Using TI-Proprietary SNRBoost  
Technology (ADS58B18 Only)  
limitation as  
a result of quantization noise for  
bandwidths less than Nyquist (fS/2).  
77.7dBFS SNR in 20MHz Bandwidth  
Both devices have gain options that can be used to  
improve SFDR performance at lower full-scale input  
ranges, especially at very high input frequencies.  
They also include a dc offset correction loop that can  
be used to cancel the ADC offset. At lower sampling  
rates, the ADC automatically operates at scaled-down  
power with no loss in performance.  
Dynamic Power Scaling with Sample Rate  
Output Interface:  
Double Data Rate (DDR) LVDS with  
Programmable Swing and Strength  
Standard Swing: 350mV  
Low Swing: 200mV  
These devices support both double data rate (DDR)  
low-voltage differential signaling (LVDS) and parallel  
CMOS digital output interfaces. The low data rate of  
the DDR LVDS interface (maximum 500Mbps) makes  
it possible to use low-cost field-programmable gate  
Default Strength: 100Ω Termination  
2x Strength: 50Ω Termination  
1.8V Parallel CMOS Interface Also  
Supported  
array (FPGA)-based receivers. They have  
a
Programmable Gain for SNR/SFDR Trade-Off  
DC Offset Correction  
low-swing LVDS mode that can be used to further  
reduce the power consumption. The strength of the  
LVDS output buffers can also be increased to support  
50Ω differential termination.  
Supports Low Input Clock Amplitude  
Package: QFN-48 (7mm × 7mm)  
The ADS58B18/B19 are both available in a compact  
QFN-48 package and specified over the industrial  
temperature range (40°C to +85°C).  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
PowerPAD is a trademark of Texas Instruments Incorporated.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
© 20092011, Texas Instruments Incorporated  
 

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