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ADS58B19IRGZT PDF预览

ADS58B19IRGZT

更新时间： 2024-11-07 12:33:31
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德州仪器 - TI 转换器模数转换器
页数 文件大小 规格书
69页 1180K
描述
11-Bit, 200MSPS/9-Bit, 250MSPS, Ultralow-Power ADCs with Analog Buffer

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ADS58B19IRGZT 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：QFN
包装说明：HVQCCN, LCC48,.27SQ,20针数：48
Reach Compliance Code：compliantECCN代码：3A991.C.1
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.85Is Samacsys：N
最大模拟输入电压：1.5 V最小模拟输入电压：
转换器类型：ADC, ONE BIT COMPARATORJESD-30 代码：S-PQCC-N48
JESD-609代码：e4长度：7 mm
最大线性误差 (EL)：0.2344%湿度敏感等级：3
模拟输入通道数量：1位数：9
功能数量：1端子数量：48
最高工作温度：85 °C最低工作温度：-40 °C
输出位码：OFFSET BINARY, 2'S COMPLEMENT BINARY输出格式：PARALLEL, WORD
封装主体材料：PLASTIC/EPOXY封装代码：HVQCCN
封装等效代码：LCC48,.27SQ,20封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：1.8 V认证状态：Not Qualified
采样速率：250 MHz座面最大高度：1 mm
子类别：Analog to Digital Converters最大压摆率：113 mA
标称供电电压：1.8 V表面贴装：YES
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子节距：0.5 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7 mmBase Number Matches：1

ADS58B19IRGZT 数据手册

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ADS58B18  
ADS58B19  
www.ti.com  
SBAS487D – NOVEMBER 2009–REVISED JANUARY 2011  
11-Bit, 200MSPS/9-Bit, 250MSPS,  
Ultralow-Power ADCs with Analog Buffer  
Check for Samples: ADS58B18, ADS58B19  
1
FEATURES  
DESCRIPTION  
23  
•
ADS58B18: 11-Bit, 200MSPS  
The ADS58B18/B19 are members of the ultralow  
power ADS4xxx analog-to-digital converter (ADC)  
family that features integrated analog buffers and  
SNRBoost technology. The ADS58B18 and  
ADS58B19 are 11-bit and 9-bit ADCs with sampling  
rates up to 200MSPS and 250MSPS, respectively.  
Innovative design techniques are used to achieve  
high dynamic performance while consuming  
extremely low power. The analog input pins have  
buffers with constant performance and input  
impedance across a wide frequency range. This  
architecture makes these parts well-suited for  
•
ADS58B19: 9-Bit, 250MSPS  
•
Integrated High-Impedance Analog Input  
Buffer  
•
Ultralow Power:  
–
–
Analog Power: 258mW at 200MSPS  
I/O Power: 69mW (DDR LVDS, low LVDS  
swing)  
•
•
High Dynamic Performance:  
–
ADS58B18: 66dBFS SNR and 81dBc SFDR  
at 150MHz  
multi-carrier,  
wide  
bandwidth  
communications  
applications such as PA linearization.  
–
ADS58B19: 55.7dBFS SNR and 76dBc  
SFDR at 150MHz  
The ADS58B18 uses TI-proprietary SNRBoost  
technology that can be used to overcome SNR  
Enhanced SNR Using TI-Proprietary SNRBoost  
Technology (ADS58B18 Only)  
limitation as  
a result of quantization noise for  
bandwidths less than Nyquist (fS/2).  
–
–77.7dBFS SNR in 20MHz Bandwidth  
Both devices have gain options that can be used to  
improve SFDR performance at lower full-scale input  
ranges, especially at very high input frequencies.  
They also include a dc offset correction loop that can  
be used to cancel the ADC offset. At lower sampling  
rates, the ADC automatically operates at scaled-down  
power with no loss in performance.  
•
•
Dynamic Power Scaling with Sample Rate  
Output Interface:  
–
Double Data Rate (DDR) LVDS with  
Programmable Swing and Strength  
–
–
–
–
Standard Swing: 350mV  
Low Swing: 200mV  
These devices support both double data rate (DDR)  
low-voltage differential signaling (LVDS) and parallel  
CMOS digital output interfaces. The low data rate of  
the DDR LVDS interface (maximum 500Mbps) makes  
it possible to use low-cost field-programmable gate  
Default Strength: 100Ω Termination  
2x Strength: 50Ω Termination  
–
1.8V Parallel CMOS Interface Also  
Supported  
array (FPGA)-based receivers. They have  
a
•
•
•
•
Programmable Gain for SNR/SFDR Trade-Off  
DC Offset Correction  
low-swing LVDS mode that can be used to further  
reduce the power consumption. The strength of the  
LVDS output buffers can also be increased to support  
50Ω differential termination.  
Supports Low Input Clock Amplitude  
Package: QFN-48 (7mm × 7mm)  
The ADS58B18/B19 are both available in a compact  
QFN-48 package and specified over the industrial  
temperature range (–40°C to +85°C).  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
PowerPAD is a trademark of Texas Instruments Incorporated.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
© 2009–2011, Texas Instruments Incorporated  
 
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ADS58B19IRGZT 替代型号

型号 品牌 替代类型 描述 数据表
ADS58B19IRGZR TI

完全替代

 11-Bit, 200MSPS/9-Bit, 250MSPS, Ultralow-Power ADCs with Analog Buffer

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