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2N5883

更新时间： 2024-09-17 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 95K
描述
Complementary Silicon High−Power Transistors

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中文翻译

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2N5883 数据手册

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2N5883, 2N5884 (PNP)  
2N5885, 2N5886 (NPN)  
2N5884 and 2N5886 are Preferred Devices  
Complementary Silicon  
High−Power Transistors  
Complementary silicon high−power transistors are designed for  
general−purpose power amplifier and switching applications.  
http://onsemi.com  
Features  
25 AMPERE COMPLEMENTARY  
SILICON POWER TRANSISTORS  
60 − 80 VOLTS, 200 WATTS  
• Low Collector−Emitter Saturation Voltage −  
V
= 1.0 Vdc, (max) at I = 15 Adc  
C
CE(sat)  
• Low Leakage Current  
= 1.0 mAdc (max) at Rated Voltage  
I
CEX  
• Excellent DC Current Gain −  
= 20 (min) at I = 10 Adc  
h
FE  
C
• High Current Gain Bandwidth Product −  
f = 4.0 MHz (min) at I = 1.0 Adc  
t
C
• Pb−Free Packages are Available*  
TO−204AA (TO−3)  
CASE 1−07  
MAXIMUM RATINGS (Note 1)  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
2N5883, 2N5885  
V
Vdc  
CEO  
MARKING DIAGRAM  
60  
80  
2N5884, 2N5886  
Collector−Base Voltage  
2N5883, 2N5885  
V
Vdc  
CB  
60  
80  
2N5884, 2N5886  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
2N588xG  
AYYWW  
MEX  
Collector Current −  
Continuous  
Peak  
I
C
B
25  
50  
Base Current  
I
7.5  
Adc  
Total Device Dissipation @ T = 25°C  
P
200  
1.15  
W
W/°C  
C
D
Derate above 25°C  
2N588x = Device Code  
x = 3, 4, 5, or 6  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +200  
°C  
J
stg  
G
A
YY  
WW  
MEX  
= Pb−Free Package  
= Assembly Location  
= Year  
THERMAL CHARACTERISTICS  
Characteristic  
= Work Week  
Symbol  
Max  
Unit  
= Country of Origin  
Thermal Resistance, Junction−to−Case  
q
0.875  
°C/W  
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1. Indicates JEDEC registered data. Units and conditions differ on some  
parameters and re−registration reflecting these changes has been requested.  
All above values most or exceed present JEDEC registered data.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 11  
2N5883/D  
 
123456

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2N5883 替代型号

型号 品牌 替代类型 描述 数据表
2N5883G ONSEMI

类似代替

 Complementary Silicon High−Power Transistors
2N5883LEADFREE CENTRAL

功能相似

 Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2

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