生命周期: | Active | 零件包装代码: | TO-204AA |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | unknown | 风险等级: | 5.19 |
Is Samacsys: | N | 最大集电极电流 (IC): | 25 A |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5884G | ONSEMI |
获取价格 |
Complementary Silicon High−Power Transistors | |
2N5884G | NJSEMI |
获取价格 |
Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-204 Tray | |
2N5885 | NJSEMI |
获取价格 |
POWER TRANSISTORS COMPLEMENTARY SILICON | |
2N5885 | ASI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P | |
2N5885 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5885 | ONSEMI |
获取价格 |
Complementary Silicon High−Power Transistors | |
2N5885 | MOSPEC |
获取价格 |
POWER TRANSISTORS(25A,200W) | |
2N5885 | BOCA |
获取价格 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS | |
2N5885 | JMNIC |
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Silicon NPN Power Transistors | |
2N5885 | ISC |
获取价格 |
isc Silicon NPN Power Transistors |