Datasheet > 2N5883/D

2N5883/D

更新时间： 2024-01-16 04:30:11

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页数	文件大小	规格书
8页	130K
描述
Complementary Silicon High-Power Transistors

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技术参数
数据手册

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2N5883/D 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.72
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N5883/D 数据手册

ON Semiconductort

PNP

Complementary Silicon

High-Power Transistors

2N5883

2N5884

. . . designed for general–purpose power amplifier and switching

applications.

NPN

2N5885

• Low Collector–Emitter Saturation Voltage —

= 1.0 Vdc, (max) at I = 15 Adc

CE(sat)

2N5886

• Low Leakage Current

= 1.0 mAdc (max) at Rated Voltage

CEX

*ON Semiconductor Preferred Device

• Excellent DC Current Gain —

= 20 (min) at I = 10 Adc

25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

• High Current Gain Bandwidth Product —

f = 4.0 MHz (min) at I = 1.0 Adc

MAXIMUM RATINGS (1)

2N5883

2N5885

2N5884

2N5886

200 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

5.0

Collector Current — Continuous

Peak

Base Current

7.5

Adc

CASE 1–07

TO–204AA

(TO–3)

Total Device Dissipation @ T = 25_C

200

1.15

Watts

Derate above 25_C

W/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.875

_C/W

(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and

re–registration reflecting these changes has been requested. All above values most or

exceed present JEDEC registered data.

200

175

150

125

100

125

150

175

200

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

2N5883/D

12 3 4 5 6 7 8

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与2N5883/D相关器件

型号	品牌	描述	获取价格	数据表
2N5883E3	MICROSEMI	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	获取价格
2N5883G	ONSEMI	Complementary Silicon High−Power Transistors	获取价格
2N5883LEADFREE	CENTRAL	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2	获取价格
2N5884	NJSEMI	POWER TRANSISTORS COMPLEMENTARY SILICON	获取价格
2N5884	MICROSEMI	Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	获取价格
2N5884	ASI	Power Bipolar Transistor, 25A I(C), 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P	获取价格