Datasheet > 934064624215

934064624215

更新时间： 2024-11-11 19:28:03

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	345K
描述
20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3

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技术参数
数据手册

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934064624215 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.76	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏源导通电阻：	0.19 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

934064624215 数据手册

NX2301P

20 V, 2 A P-channel Trench MOSFET

Rev. 1 — 26 October 2010

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

1.8 V R_DSonrated for Low Voltage Gate Drive

Very fast switching

Trench MOSFET technology

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

T_amb= 25 °C

Min

Typ

Max

−20

±8

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

[1]

[2]

T_amb= 25 °C;

V_GS= −4.5 V

−2

R_DSon

drain-source on-state

resistance

T_j= 25 °C;

100

120

mΩ

V_GS= −4.5 V;

I_D= −1 A

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm², t ≤ 5 s.

[2] Pulse test: t_p≤ 300 μs; δ ≤ 0.01.

12 3 4 5 6 7...16

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