生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 259 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 100 A | 最大漏源导通电阻: | 0.0014 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MO-235 |
JESD-30 代码: | R-PSSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 1030 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
934065074115 | NXP |
获取价格 |
100A, 25V, 0.00125ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 | |
934065075115 | NXP |
获取价格 |
84A, 25V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 | |
934065122112 | NXP |
获取价格 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
934065159127 | NXP |
获取价格 |
120A, 30V, 0.0014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | |
934065161127 | NXP |
获取价格 |
120A, 40V, 0.0016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | |
934065174118 | NXP |
获取价格 |
120A, 40V, 0.0014ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | |
934065498118 | NXP |
获取价格 |
Analog Circuit | |
934065659112 | NXP |
获取价格 |
S BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
934065698115 | NXP |
获取价格 |
5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-74, TSOP-6 | |
934065904118 | NXP |
获取价格 |
22A, 75V, 0.064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3/2 |