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934065072115 PDF预览

934065072115

更新时间: 2024-11-11 20:50:07
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
14页 269K
描述
100A, 30V, 0.0014ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4

934065072115 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):259 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):100 A最大漏源导通电阻:0.0014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):1030 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

934065072115 数据手册

 浏览型号934065072115的Datasheet PDF文件第2页浏览型号934065072115的Datasheet PDF文件第3页浏览型号934065072115的Datasheet PDF文件第4页浏览型号934065072115的Datasheet PDF文件第5页浏览型号934065072115的Datasheet PDF文件第6页浏览型号934065072115的Datasheet PDF文件第7页 
PSMN1R0-30YLC  
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using  
NextPower technology  
15 January 2015  
Product data sheet  
1. General description  
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
2. Features and benefits  
High reliability Power SO8 package, qualified to 175°C  
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads  
Ultra low Rdson and low parasitic inductance  
3. Applications  
DC-to-DC converters  
Lithium-ion battery protection  
Load switching  
Power OR-ing  
Server power supplies  
Sync rectifier  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
Tmb = 25 °C; VGS = 10 V; Fig. 2  
-
-
-
-
-
[1]  
-
100  
272  
175  
A
Ptot  
Tj  
total power dissipation Tmb = 25 °C; Fig. 1  
junction temperature  
-
W
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;  
Fig. 12  
-
-
1.1  
1.4  
mΩ  
mΩ  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 12  
0.85  
1.15  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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