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934066509127 PDF预览

934066509127

更新时间: 2024-11-11 20:03:43
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 210K
描述
120A, 30V, 0.0016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3

934066509127 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1405 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0016 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):1408 A参考标准:AEC-Q101; IEC-60134
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934066509127 数据手册

 浏览型号934066509127的Datasheet PDF文件第2页浏览型号934066509127的Datasheet PDF文件第3页浏览型号934066509127的Datasheet PDF文件第4页浏览型号934066509127的Datasheet PDF文件第5页浏览型号934066509127的Datasheet PDF文件第6页浏览型号934066509127的Datasheet PDF文件第7页 
BUK7E1R6-30E  
N-channel TrenchMOS standard level FET  
11 September 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.  
This product has been designed and qualified to AEC Q101 standard for use in high  
performance automotive applications.  
1.2 Features and benefits  
AEC Q101 compliant  
Repetitive avalanche rated  
Suitable for thermally demanding environments due to 175 °C rating  
True standard level gate with VGS(th) rating of greater than 1V at 175 °C  
1.3 Applications  
12 V Automotive systems  
Electric and electro-hydraulic power steering  
Motors, lamps and solenoid control  
Start-Stop micro-hybrid applications  
Transmission control  
Ultra high performance power switching  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 1  
-
-
-
-
-
-
[1]  
120  
349  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 11  
-
-
1.25  
49.8  
1.6  
-
mΩ  
nC  
VGS = 10 V; ID = 25 A; VDS = 24 V;  
Fig. 13; Fig. 14  
[1] Continuous current is limited by package.  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 
 

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