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934067977115 PDF预览

934067977115

更新时间: 2024-11-21 20:03:55
品牌 Logo 应用领域
恩智浦 - NXP 放大器晶体管
页数 文件大小 规格书
19页 254K
描述
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-243AA

934067977115 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, SC-62, TO-243, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:L BANDJEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

934067977115 数据手册

 浏览型号934067977115的Datasheet PDF文件第2页浏览型号934067977115的Datasheet PDF文件第3页浏览型号934067977115的Datasheet PDF文件第4页浏览型号934067977115的Datasheet PDF文件第5页浏览型号934067977115的Datasheet PDF文件第6页浏览型号934067977115的Datasheet PDF文件第7页 
BFU590Q  
7
2
6
NPN wideband silicon RF transistor  
Rev. 1 — 28 April 2014  
Product data sheet  
1. Product profile  
1.1 General description  
NPN silicon microwave transistor for high speed, medium power applications in a plastic,  
3-pin SOT89 package.  
The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium  
power applications up to 2 GHz.  
1.2 Features and benefits  
Medium power, high linearity, high breakdown voltage RF transistor  
AEC-Q101 qualified  
Maximum stable gain 11 dB at 900 MHz  
PL(1dB) 22 dBm at 900 MHz  
8 GHz fT silicon technology  
1.3 Applications  
Automotive applications  
Broadband amplifiers  
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)  
Large signal amplifiers for ISM applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
open emitter  
open base  
Min Typ Max Unit  
VCB  
VCE  
collector-base voltage  
collector-emitter voltage  
-
-
24  
12  
24  
2
V
V
V
V
-
-
shorted base  
open collector  
-
-
VEB  
IC  
emitter-base voltage  
collector current  
-
-
-
80  
-
200 mA  
2000 mW  
130  
[1]  
Ptot  
hFE  
Cc  
total power dissipation  
DC current gain  
Tsp 90 C  
-
IC = 80 mA; VCE = 8 V  
VCB = 8 V; f = 1 MHz  
IC = 80 mA; VCE = 8 V; f = 900 MHz  
60  
-
95  
2.0  
8.0  
collector capacitance  
transition frequency  
-
-
pF  
fT  
-
GHz  

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