Datasheet > 934068292115

934068292115

更新时间： 2024-11-22 08:41:59

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲光电二极管晶体管
页数	文件大小	规格书
13页	317K
描述
5.5A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN

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934068292115 数据手册

BUK78150-55A

N-channel TrenchMOS standard level FET

Rev. 02 — 16 June 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

 Suitable for standard level gate drive

on-state resistance

sources

 Q101 compliant

1.3 Applications

 12 V and 24 V loads

 Motors, lamps and solenoids

 Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 150 °C

5.5

I_D

drain current

V_GS= 10 V; T_sp= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_sp= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 5 A;

T_j= 150 °C;

see Figure 12; see Figure 13

278 mΩ

on-state

resistance

V_GS= 10 V; I_D= 5 A;

128 150 mΩ

T_j= 25 °C;

see Figure 12; see Figure 13

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 5 A; V_sup≤ 55 V;

R_GS= 50 Ω; V_GS= 10 V;

avalanche energy T_j(init)= 25 °C; unclamped

12 3 4 5 6 7...13

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