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934068293135

更新时间: 2024-11-22 09:55:35
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 298K
描述
MOSFET N-CH 55V 5.5A SOT223

934068293135 数据手册

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BUK98150-55A  
N-channel TrenchMOS logic level FET  
19 March 2014  
Product data sheet  
1. General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
2. Features and benefits  
Low conduction losses due to low on-state resistance  
Q101 compliant  
Suitable for logic level gate drive sources  
3. Applications  
12 V and 24 V loads  
Automotive and general purpose power switching  
Motors, lamps and solenoids  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
55  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 150 °C  
VGS = 5 V; Tsp = 25 °C; Fig. 2; Fig. 3  
-
-
-
-
-
-
5.5  
8
A
Ptot  
total power dissipation Tsp = 25 °C; Fig. 1  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 5 A; Tj = 25 °C  
VGS = 10 V; ID = 5 A; Tj = 25 °C  
-
-
-
-
161  
137  
150  
mΩ  
mΩ  
mΩ  
116  
128  
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12;  
Fig. 13  
Dynamic characteristics  
QGD  
gate-drain charge  
VGS = 5 V; ID = 5 A; VDS = 44 V;  
Tj = 25 °C; Fig. 14  
-
-
2.8  
-
nC  
mJ  
Avalanche ruggedness  
EDS(AL)S  
non-repetitive drain-  
ID = 5.5 A; Vsup ≤ 55 V; RGS = 50 Ω;  
VGS = 5 V; Tj(init) = 25 °C; unclamped  
-
22  
source avalanche  
energy  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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