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934068556118 PDF预览

934068556118

更新时间: 2024-11-22 07:56:31
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
13页 293K
描述
18A, 55V, 0.086ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, DPAK-3

934068556118 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):33 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.086 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):73 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934068556118 数据手册

 浏览型号934068556118的Datasheet PDF文件第2页浏览型号934068556118的Datasheet PDF文件第3页浏览型号934068556118的Datasheet PDF文件第4页浏览型号934068556118的Datasheet PDF文件第5页浏览型号934068556118的Datasheet PDF文件第6页浏览型号934068556118的Datasheet PDF文件第7页 
K
A
P
BUK9277-55A  
N-channel TrenchMOS logic level FET  
D
12 June 2014  
Product data sheet  
1. General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
2. Features and benefits  
Q101 compliant  
Suitable for logic level gate drive sources  
Suitable for thermally demanding environments due to 175 °C rating  
3. Applications  
12 V and 24 V loads  
Automotive and general purpose power switching  
Motors, lamps and solenoids  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
55  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3  
-
-
-
-
-
-
18  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
51  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 10 A; Tj = 25 °C  
VGS = 4.5 V; ID = 10 A; Tj = 25 °C  
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 13  
-
-
-
59  
-
69  
86  
77  
mΩ  
mΩ  
mΩ  
65  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-  
ID = 18 A; Vsup ≤ 55 V; RGS = 50 Ω;  
VGS = 5 V; Tj(init) = 25 °C; unclamped  
-
-
33  
mJ  
source avalanche  
energy  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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