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934068282135 PDF预览

934068282135

更新时间: 2024-11-21 15:44:43
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 161K
描述
3.5A, 55V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN

934068282135 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):30 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):3.5 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):40 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

934068282135 数据手册

 浏览型号934068282135的Datasheet PDF文件第2页浏览型号934068282135的Datasheet PDF文件第3页浏览型号934068282135的Datasheet PDF文件第4页浏览型号934068282135的Datasheet PDF文件第5页浏览型号934068282135的Datasheet PDF文件第6页浏览型号934068282135的Datasheet PDF文件第7页 
BUK7880-55  
T223  
SO  
N-channel TrenchMOS standard level FET  
Rev. 3 — 21 April 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
„ AEC Q101 compliant  
„ Low conduction losses due to low  
on-state resistance  
„ Electrostatically robust due to  
integrated protection diodes  
1.3 Applications  
„ Automotive and general purpose  
power switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
drain current  
Tj 25 °C; Tj 150 °C  
-
-
-
-
-
-
55  
V
ID  
Tsp = 25 °C  
7.5  
1.8  
A
Ptot  
total power dissipation Tsp = 25 °C; Tamb = 25 °C  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Avalanche ruggedness  
VGS = 10 V; ID = 5 A;  
Tj = 25 °C  
-
-
65  
-
80  
30  
mΩ  
EDS(AL)S  
non-repetitive  
drain-source  
ID = 2.5 A; Vsup 25 V;  
RGS = 50 ; VGS = 10 V;  
Tj(init) = 25 °C; unclamped  
mJ  
avalanche energy  

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