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934065174118 PDF预览

934065174118

更新时间: 2024-11-11 19:56:23
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
14页 222K
描述
120A, 40V, 0.0014ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

934065174118 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):1400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):1320 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

934065174118 数据手册

 浏览型号934065174118的Datasheet PDF文件第2页浏览型号934065174118的Datasheet PDF文件第3页浏览型号934065174118的Datasheet PDF文件第4页浏览型号934065174118的Datasheet PDF文件第5页浏览型号934065174118的Datasheet PDF文件第6页浏览型号934065174118的Datasheet PDF文件第7页 
PSMN1R1-40BS  
AK  
D2P  
N-channel 40 V 1.3 mstandard level MOSFET in D2PAK  
Rev. 2 — 29 February 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This  
product is designed and qualified for use in a wide range of industrial, communications  
and domestic equipment.  
1.2 Features and benefits  
High efficiency due to low switching  
Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
DC-to-DC convertors  
Load switching  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
40  
Unit  
V
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
Tmb = 25 °C; VGS = 10 V; see Figure 1  
-
-
-
-
-
[1]  
ID  
-
120  
306  
175  
A
Ptot  
total power dissipation Tmb = 25 °C; see Figure 2  
junction temperature  
-
W
Tj  
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 100 °C;  
see Figure 12;see Figure 13  
-
-
1.68  
1.16  
2
mΩ  
mΩ  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
see Figure 13  
1.3  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 75 A; VDS = 20 V;  
see Figure 14;see Figure 15  
-
-
32  
-
-
nC  
nC  
QG(tot)  
136  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;  
Vsup 40 V; unclamped; RGS = 50 ;  
tp = 0.1 ms  
-
-
1.4  
J
drain-source  
avalanche energy  
[1] Continuous current is limited by package  

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