Datasheet > 934064987115

934064987115

更新时间： 2024-11-11 21:03:47

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	332K
描述
320mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN

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技术参数
数据手册

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934064987115 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.76	其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	0.32 A	最大漏源导通电阻：	1.6 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

934064987115 数据手册

BSS138PW

60 V, 320 mA N-channel Trench MOSFET

Rev. 1 — 2 November 2010

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a very small

SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

T_amb= 25 °C

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

[1]

[2]

T_amb= 25 °C;

V_GS= 10 V

320

R_DSon

drain-source on-state

resistance

T_j= 25 °C;

0.9

1.6

V_GS= 10 V;

I_D= 300 mA

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm².

[2] Pulse test: t_p≤ 300 μs; δ ≤ 0.01.

12 3 4 5 6 7...16

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