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74LVC74APW-Q100 PDF预览

74LVC74APW-Q100

更新时间: 2024-11-20 02:56:59
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
18页 722K
描述
Dual D-type flip-flop with set and reset; positive-edge trigger

74LVC74APW-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.57
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G14
长度:5 mm逻辑集成电路类型:D FLIP-FLOP
位数:1功能数量:2
端子数量:14最高工作温度:125 °C
最低工作温度:-40 °C输出极性:COMPLEMENTARY
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED传播延迟(tpd):11.9 ns
筛选级别:AEC-Q100座面最大高度:1.1 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.2 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发器类型:POSITIVE EDGE宽度:4.4 mm
最小 fmax:120 MHzBase Number Matches:1

74LVC74APW-Q100 数据手册

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74LVC74A-Q100  
Dual D-type flip-flop with set and reset; positive-edge trigger  
Rev. 2 — 5 April 2013  
Product data sheet  
1. General description  
The 74LVC74A-Q100 is a dual edge triggered D-type flip-flop. It has individual data (nD)  
inputs, clock (nCP) inputs, set (nSD) and (nRD) inputs, and complementary nQ and nQ  
outputs.  
The set and reset are asynchronous active LOW inputs and operate independently of the  
clock input. Information on the data input is transferred to the nQ output on the  
LOW-to-HIGH transition of the clock pulse. The nD inputs must be stable one set-up time  
prior to the LOW-to-HIGH clock transition, for predictable operation.  
Schmitt trigger action at all inputs makes the circuit highly tolerant of slower input rise and  
fall times.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
5 V tolerant inputs for interlacing with 5 V logic  
Wide supply voltage range from 1.2 V to 3.6 V  
CMOS low power consumption  
Direct interface with TTL levels  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
Multiple package options  

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