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74LVC3G06DC-G PDF预览

74LVC3G06DC-G

更新时间: 2024-02-25 08:22:28
品牌 Logo 应用领域
恩智浦 - NXP 电池光电二极管逻辑集成电路触发器
页数 文件大小 规格书
21页 279K
描述
Triple inverter with open-drain output - Description: Triple Inverter With Open-Drain Outputs ; Logic switching levels: TTL ; Number of pins: 8 ; Output drive capability: 32 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.0@3.3V ns; Voltage: 1.65 - 5.5

74LVC3G06DC-G 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 含铅
是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP, TSSOP8,.12,20Reach Compliance Code:unknown
风险等级:5.74JESD-30 代码:R-PDSO-G8
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.024 A端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:3.3 VProp。Delay @ Nom-Sup:4.3 ns
认证状态:Not Qualified施密特触发器:NO
子类别:Gates标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

74LVC3G06DC-G 数据手册

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74LVC3G06  
Triple inverter with open-drain output  
Rev. 11 — 28 March 2013  
Product data sheet  
1. General description  
The 74LVC3G06 provides three inverting buffers.  
The output of this device is an open drain and can be connected to other open-drain  
outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device in a mixed 3.3 V and 5 V environment.  
Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing a damaging backflow current through the device  
when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant input/output for interfacing with 5 V logic  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

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