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74LVC3G07DP PDF预览

74LVC3G07DP

更新时间: 2024-09-27 21:55:31
品牌 Logo 应用领域
恩智浦 - NXP 栅极逻辑集成电路光电二极管
页数 文件大小 规格书
14页 79K
描述
Triple buffer with open-drain output

74LVC3G07DP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:TSSOP, TSSOP8,.16针数:8
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.37系列:LVC/LCX/Z
JESD-30 代码:S-PDSO-G8JESD-609代码:e4
长度:3 mm负载电容(CL):50 pF
逻辑集成电路类型:BUFFER最大I(ol):0.024 A
湿度敏感等级:1功能数量:3
输入次数:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.16
封装形状:SQUARE封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:3.3 VProp。Delay @ Nom-Sup:4.7 ns
传播延迟(tpd):8.4 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3 mmBase Number Matches:1

74LVC3G07DP 数据手册

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74LVC3G07  
Triple buffer with open-drain output  
Rev. 03 — 01 February 2005  
Product data sheet  
1. General description  
The 74LVC3G07 is a high-performance, low-power, low-voltage, Si-gate CMOS device  
and superior to most advanced CMOS compatible TTL families.  
Input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device in a mixed 3.3 V and 5 V environment.  
Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry  
disables the output, preventing the damaging backflow current through the device when it  
is powered down.  
The 74LVC3G07 provides three non-inverting buffers.  
The output of the device is an open drain and can be connected to other open-drain  
outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.  
2. Features  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant input/output for interfacing with 5 V logic  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V).  
ESD protection:  
HBM EIA/JESD22-A114-B exceeds 2000 V  
MM EIA/JESD22-A115-A exceeds 200 V.  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C.  

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