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74LVC3G06GT

更新时间： 2024-01-14 10:32:54

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	80K
描述
Triple inverter with open-drain output

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74LVC3G06GT 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否无铅：	含铅
是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

74LVC3G06GT 数据手册

74LVC3G06

Triple inverter with open-drain output

Rev. 03 — 01 February 2005

Product data sheet

1. General description

The 74LVC3G06 is a high-performance, low-power, low-voltage, Si-gate CMOS device

and superior to most advanced CMOS compatible TTL families.

Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this

device in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall

time.

This device is fully speciﬁed for partial power-down applications using I_off. The I_offcircuitry

disables the output, preventing the damaging backﬂow current through the device when it

is powered down.

The 74LVC3G06 provides three inverting buffers.

The output of this device is an open drain and can be connected to other open-drain

outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.

2. Features

■ Wide supply voltage range from 1.65 V to 5.5 V

■ 5 V tolerant input/output for interfacing with 5 V logic

■ High noise immunity

■ Complies with JEDEC standard:

◆ JESD8-7 (1.65 V to 1.95 V)

◆ JESD8-5 (2.3 V to 2.7 V)

◆ JESD8-B/JESD36 (2.7 V to 3.6 V).

■ ESD protection:

◆ HBM EIA/JESD22-A114-B exceeds 2000 V

◆ MM EIA/JESD22-A115-A exceeds 200 V.

■ −24 mA output drive (V_CC= 3.0 V)

■ CMOS low power consumption

■ Latch-up performance exceeds 250 mA

■ Direct interface with TTL levels

■ Inputs accept voltages up to 5 V

■ Multiple package options

■ Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C.

12 3 4 5 6 7...15

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