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74LVC3G07DC-G PDF预览

74LVC3G07DC-G

更新时间: 2024-02-23 03:18:33
品牌 Logo 应用领域
恩智浦 - NXP 电池光电二极管逻辑集成电路触发器
页数 文件大小 规格书
16页 84K
描述
Triple buffer with open-drain output - Description: Triple Buffer With Open-Drain Outputs ; Logic switching levels: TTL ; Number of pins: 8 ; Output drive capability: 32 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.65 - 5.5

74LVC3G07DC-G 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 含铅
是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP, TSSOP8,.12,20Reach Compliance Code:unknown
风险等级:5.75JESD-30 代码:R-PDSO-G8
负载电容(CL):50 pF逻辑集成电路类型:BUFFER
最大I(ol):0.024 A端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL电源:3.3 V
Prop。Delay @ Nom-Sup:4.7 ns认证状态:Not Qualified
施密特触发器:NO子类别:Gates
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUALBase Number Matches:1

74LVC3G07DC-G 数据手册

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74LVC3G07  
Triple buffer with open-drain output  
Rev. 06 — 16 June 2008  
Product data sheet  
1. General description  
The 74LVC3G07 provides three non-inverting buffers.  
The output of the device is an open-drain and can be connected to other open-drain  
outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.  
Input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device in a mixed 3.3 V and 5 V environment.  
Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing the damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 1.65 V to 5.5 V  
I 5 V tolerant input/output for interfacing with 5 V logic  
I High noise immunity  
I Complies with JEDEC standard:  
N JESD8-7 (1.65 V to 1.95 V)  
N JESD8-5 (2.3 V to 2.7 V)  
N JESD8-B/JESD36 (2.7 V to 3.6 V).  
I ESD protection:  
N HBM JESD22-A114E exceeds 2000 V  
N MM JESD22-A115-A exceeds 200 V  
I 24 mA output drive (VCC = 3.0 V)  
I CMOS low power consumption  
I Latch-up performance exceeds 250 mA  
I Direct interface with TTL levels  
I Inputs accept voltages up to 5 V  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C.  
 
 

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