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74LVC3G14GM,125 PDF预览

74LVC3G14GM,125

更新时间: 2024-09-30 14:47:07
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路触发器
页数 文件大小 规格书
18页 95K
描述
74LVC3G14 - Triple inverting Schmitt trigger with 5 V tolerant input QFN 8-Pin

74LVC3G14GM,125 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFN包装说明:1.60 X 1.60 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT902-1, XQFN-8
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.56
系列:LVC/LCX/ZJESD-30 代码:S-PBCC-B8
JESD-609代码:e4长度:1.6 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.024 A湿度敏感等级:1
功能数量:3输入次数:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VBCC封装等效代码:LCC8,.06SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:3.3 VProp。Delay @ Nom-Sup:6.7 ns
传播延迟(tpd):12 ns认证状态:Not Qualified
施密特触发器:YES座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:NICKEL PALLADIUM GOLD
端子形式:BUTT端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:1.6 mmBase Number Matches:1

74LVC3G14GM,125 数据手册

 浏览型号74LVC3G14GM,125的Datasheet PDF文件第2页浏览型号74LVC3G14GM,125的Datasheet PDF文件第3页浏览型号74LVC3G14GM,125的Datasheet PDF文件第4页浏览型号74LVC3G14GM,125的Datasheet PDF文件第5页浏览型号74LVC3G14GM,125的Datasheet PDF文件第6页浏览型号74LVC3G14GM,125的Datasheet PDF文件第7页 
74LVC3G14  
Triple inverting Schmitt trigger with 5 V tolerant input  
Rev. 07 — 12 June 2008  
Product data sheet  
1. General description  
The 74LVC3G14 provides three inverting buffers with Schmitt trigger action.  
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of  
this device in a mixed 3.3 V and 5 V environment. Schmitt trigger action at the inputs  
makes the circuit tolerant of slower input rise and fall time. This device is fully specified for  
partial power-down applications using IOFF. The IOFF circuitry disables the output,  
preventing the damaging backflow current through the device when it is powered down.  
2. Features  
I Wide supply voltage range from 1.65 V to 5.5 V  
I 5 V tolerant input/output for interfacing with 5 V logic  
I High noise immunity  
I ESD protection:  
N HBM JESD22-A114E exceeds 2000 V  
N MM JESD22-A115-A exceeds 200 V  
I ±24 mA output drive (VCC = 3.0 V)  
I CMOS low power consumption  
I Latch-up performance exceeds 250 mA  
I Direct interface with TTL levels  
I Unlimited rise and fall times  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C.  
3. Applications  
I Wave and pulse shaper for highly noisy environment  
I Astable multivibrator  
I Monostable multivibrator.  
 
 
 

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