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74LVC1G10GM,115 PDF预览

74LVC1G10GM,115

更新时间: 2024-11-24 14:27:23
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路
页数 文件大小 规格书
17页 118K
描述
74LVC1G10 - Single 3-input NAND gate SON 6-Pin

74LVC1G10GM,115 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC6,.04,20
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.49
Is Samacsys:N系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-N6JESD-609代码:e3
长度:1.45 mm负载电容(CL):50 pF
逻辑集成电路类型:NAND GATE最大I(ol):0.024 A
湿度敏感等级:1功能数量:1
输入次数:3端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC6,.04,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:3.3 V
Prop。Delay @ Nom-Sup:6.2 ns传播延迟(tpd):21.5 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):2.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1 mm
Base Number Matches:1

74LVC1G10GM,115 数据手册

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74LVC1G10  
Single 3-input NAND gate  
Rev. 3 — 8 December 2011  
Product data sheet  
1. General description  
The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate.  
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of  
this device in a mixed 3.3 V and 5 V environment.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V).  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

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