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74CBTLV1G125GM PDF预览

74CBTLV1G125GM

更新时间: 2024-09-17 11:10:35
品牌 Logo 应用领域
安世 - NEXPERIA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
19页 310K
描述
Single bus switchProduction

74CBTLV1G125GM 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VSON,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.32
系列:CBTLV/3BJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1.45 mm
逻辑集成电路类型:BUS DRIVER湿度敏感等级:1
位数:1功能数量:1
端口数量:2端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260传播延迟(tpd):0.39 ns
认证状态:Not Qualified座面最大高度:0.5 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1 mm
Base Number Matches:1

74CBTLV1G125GM 数据手册

 浏览型号74CBTLV1G125GM的Datasheet PDF文件第2页浏览型号74CBTLV1G125GM的Datasheet PDF文件第3页浏览型号74CBTLV1G125GM的Datasheet PDF文件第4页浏览型号74CBTLV1G125GM的Datasheet PDF文件第5页浏览型号74CBTLV1G125GM的Datasheet PDF文件第6页浏览型号74CBTLV1G125GM的Datasheet PDF文件第7页 
74CBTLV1G125  
Single bus switch  
Rev. 7.1 — 12 February 2022  
Product data sheet  
1. General description  
The 74CBTLV1G125 is a single high-speed line switch. The switch is disabled when the output  
enable (OE) input is high.  
To ensure the high-impedance OFF-state during power-up or power-down, tie OE to the VCC  
through a pull-up resistor. The current-sinking capability of the driver determines the minimum  
value of the resistor.  
Schmitt-trigger action at control inputs makes the circuit tolerant of slower input rise and fall times.  
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry  
disables the output, preventing the potentially damaging backflow current through the device when  
it is powered down.  
2. Features and benefits  
Supply voltage range from 2.3 V to 3.6 V  
Overvoltage tolerant control inputs to 3.6 V  
High noise immunity  
Complies with JEDEC standard:  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
5 Ω switch connection between two ports  
Rail to rail switching on data I/O ports  
CMOS low power consumption  
Latch-up performance meets requirements of JESD78 Class I  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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