74AUP2G00
Electrical Characteristics (continued)
TA = -40°C to +125°C
Symbol
Parameter
Test Conditions
Unit
VCC
Min
0.80 X VCC
0.70 X VCC
1.6
Max
—
—
—
0.8V to 1.65V
1.65V to 1.95V
2.3V to 2.7V
3.0V to 3.6V
0.8V to 1.65V
—
High-Level Input Voltage
V
VIH
—
—
—
—
—
2.0
—
0.25 X VCC
0.30 X VCC
0.7
—
—
1.65V to 1.95V
2.3V to 2.7V
3.0V to 3.6V
0.8V to 3.6V
Low-Level Input Voltage
V
V
VIL
—
—
—
—
0.9
—
IOH = -20μA
VCC – 0.11
0.6 X VCC
0.93
1.1V
1.4V
—
—
IOH = -1.1mA
IOH = -1.7mA
1.65V
1.17
—
IOH = -1.9mA
High-Level Output Voltage
VOH
1.77
1.67
2.40
2.30
—
—
IOH = -2.3mA
2.3V
3V
—
IOH = -3.1mA
—
IOH = -2.7mA
—
IOH = -4mA
0.8V to 3.6V
1.1V
0.11
0.33 X VCC
0.41
0.39
0.36
0.50
0.36
0.50
± 0.75
± 1.0
± 2.5
3.0
IOL = 20μA
—
IOL = 1.1mA
1.4V
—
IOL = 1.7mA
1.65V
—
IOL = 1.9mA
Low-Level Input Voltage
V
VOL
—
IOL = 2.3mA
2.3V
3V
—
IOL = 3.1mA
—
IOL = 2.7mA
—
IOL = 4mA
Input Current
0V to 3.6V
0V
—
μA
μA
μA
μA
II
A or B Input, VI = GND to 3.6V
VI or VO = 0V to 3.6V
VI or VO = 0V to 3.6V
VI = GND or VCC, IO = 0
Power Down Leakage Current
Delta Power Down Leakage Current
Supply Current
—
IOFF
∆IOFF
ICC
0V to 0.2V
0.8V to 3.6V
—
—
Input at VCC –0.6V Other Inputs
at VCC or GND
Additional Supply Current
3.3V
—
75
μA
∆ICC
Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.)
Test
Conditions
Parameter
Typ
Unit
VCC
0.8V
5.1
5.2
5.2
5.5
5.7
6.0
2.0
1.2V ± 0.1V
1.5V ± 0.1V
1.8V ± 0.15V
2.5V ± 0.2V
3.3V ± 0.3V
0V or 3.3V
Power Dissipation
Capacitance
f = 1MHz
No Load
pF
Cpd
Input Capacitance
pF
Ci
Vi = VCC or GND
Thermal Resistance
Junction-to-Ambient
X2-DFN1210-8
X2-DFN1210-8
(Note 9)
(Note 9)
—
—
395
236
°C/W
θJA
Thermal Resistance
Junction-to-Case
°C/W
θJC
Note:
9. Test condition, X2-DFN1210-8 device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5 of 9
www.diodes.com
January 2015
© Diodes Incorporated
74AUP2G00
Document number: DS36139 Rev 2 - 2