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74AUP1T97GN PDF预览

74AUP1T97GN

更新时间: 2023-09-03 20:30:39
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
19页 279K
描述
Low-power configurable gate with voltage-level translatorProduction

74AUP1T97GN 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:XSON-6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.65
Is Samacsys:N其他特性:CAN ALSO OPERATE AT 3.3V NOMINAL
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1 mm
逻辑集成电路类型:LOGIC CIRCUIT湿度敏感等级:1
功能数量:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:0.35 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.3 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:0.9 mmBase Number Matches:1

74AUP1T97GN 数据手册

 浏览型号74AUP1T97GN的Datasheet PDF文件第2页浏览型号74AUP1T97GN的Datasheet PDF文件第3页浏览型号74AUP1T97GN的Datasheet PDF文件第4页浏览型号74AUP1T97GN的Datasheet PDF文件第5页浏览型号74AUP1T97GN的Datasheet PDF文件第6页浏览型号74AUP1T97GN的Datasheet PDF文件第7页 
74AUP1T97  
Low-power configurable gate with voltage-level translator  
Rev. 9 — 17 July 2023  
Product data sheet  
1. General description  
The 74AUP1T97 is a configurable multiple function gate with level translating, Schmitt-trigger  
inputs. The device can be configured as any of the following logic functions MUX, AND, OR,  
NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to  
VCC or GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic  
levels in 3.3 V applications. This device ensures very low static and dynamic power consumption  
across the entire VCC range from 2.3 V to 3.6 V. This device is fully specified for partial power down  
applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging  
backflow current through the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 2.3 V to 3.6 V  
CMOS low power dissipation  
High noise immunity  
Overvoltage tolerant inputs to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial power-down mode operation  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Low static power consumption; ICC = 1.5 μA (maximum)  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
ESD protection:  
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V  
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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