Datasheet > 74AUP1T97GW-Q100

74AUP1T97GW-Q100

更新时间： 2024-09-26 11:11:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	230K
描述
Low-power configurable gate with voltage-level translatorProduction

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74AUP1T97GW-Q100 数据手册

74AUP1T97-Q100

Low-power configurable gate with voltage-level translator

Rev. 3 — 27 January 2022

Product data sheet

1. General description

The 74AUP1T97-Q100 is a configurable multiple function gate with level translating, Schmitt-trigger

inputs. The device can be configured as any of the following logic functions MUX, AND, OR,

NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to

V_CCor GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic

levels in 3.3 V applications. This device ensures very low static and dynamic power consumption

across the entire V_CCrange from 2.3 V to 3.6 V. This device is fully specified for partial power down

applications using I_OFF. The I_OFFcircuitry disables the output, preventing the potentially damaging

backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100

(Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

•

Automotive product qualification in accordance with AEC-Q100 (Grade 1)

Specified from -40 °C to +85 °C and from -40 °C to +125 °C

•

Wide supply voltage range from 2.3 V to 3.6 V

CMOS low power dissipation

High noise immunity

Overvoltage tolerant inputs to 3.6 V

Low noise overshoot and undershoot < 10 % of V_CC

I_OFFcircuitry provides partial power-down mode operation

Latch-up performance exceeds 100 mA per JESD 78 Class II

Low static power consumption; I_CC= 1.5 μA (maximum)

Complies with JEDEC standards:

•

JESD8-12 (0.8 V to 1.3 V)

JESD8-11 (0.9 V to 1.65 V)

JESD8-7 (1.65 V to 1.95 V)

JESD8-5 (2.3 V to 2.7 V)

JESD8C (2.7 V to 3.6 V)

•

ESD protection:

•

HBM JESD22-A114F Class 3A exceeds 5000 V

MM JESD22-A115-A exceeds 200 V

CDM JESD22-C101E exceeds 1000 V

12 3 4 5 6 7...15

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