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74AUP1T58GF,132 PDF预览

74AUP1T58GF,132

更新时间: 2024-01-23 22:16:21
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路
页数 文件大小 规格书
20页 213K
描述
74AUP1T58 - Low-power configurable gate with voltage-level translator SON 6-Pin

74AUP1T58GF,132 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, XSON-6
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.17
系列:AUP/ULP/VJESD-30 代码:S-PDSO-N6
JESD-609代码:e3长度:1 mm
负载电容(CL):30 pF逻辑集成电路类型:LOGIC CIRCUIT
最大I(ol):0.004 A湿度敏感等级:1
功能数量:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC6,.04,14封装形状:SQUARE
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:2.5/3.3 V
Prop。Delay @ Nom-Sup:9.4 ns认证状态:Not Qualified
施密特触发器:YES座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.35 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP1T58GF,132 数据手册

 浏览型号74AUP1T58GF,132的Datasheet PDF文件第2页浏览型号74AUP1T58GF,132的Datasheet PDF文件第3页浏览型号74AUP1T58GF,132的Datasheet PDF文件第4页浏览型号74AUP1T58GF,132的Datasheet PDF文件第5页浏览型号74AUP1T58GF,132的Datasheet PDF文件第6页浏览型号74AUP1T58GF,132的Datasheet PDF文件第7页 
74AUP1T58  
Low-power configurable gate with voltage-level translator  
Rev. 5 — 15 August 2012  
Product data sheet  
1. General description  
The 74AUP1T58 provides low-power, low-voltage configurable logic gate functions. The  
output state is determined by eight patterns of 3-bit input. The user can choose the logic  
functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected to  
V
CC or GND.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 2.3 V to 3.6 V.  
The 74AUP1T58 is designed for logic-level translation applications with input switching  
levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single  
2.5 V or 3.3 V supply voltage.  
The wide supply voltage range ensures normal operation as battery voltage drops from  
3.6 V to 2.3 V.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across  
the entire VCC range.  
2. Features and benefits  
Wide supply voltage range from 2.3 V to 3.6 V  
High noise immunity  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 1.5 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78B Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

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