5秒后页面跳转
74AUP1T57GM,115 PDF预览

74AUP1T57GM,115

更新时间: 2024-02-11 20:31:54
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
20页 210K
描述
74AUP1T57 - Low-power configurable gate with voltage-level translator SON 6-Pin

74AUP1T57GM,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, XSON-6
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.46
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1.45 mm
负载电容(CL):30 pF逻辑集成电路类型:MAJORITY LOGIC GATE
最大I(ol):0.0027 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:2.5/3.3 VProp。Delay @ Nom-Sup:11.9 ns
传播延迟(tpd):11.9 ns认证状态:Not Qualified
施密特触发器:YES座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP1T57GM,115 数据手册

 浏览型号74AUP1T57GM,115的Datasheet PDF文件第2页浏览型号74AUP1T57GM,115的Datasheet PDF文件第3页浏览型号74AUP1T57GM,115的Datasheet PDF文件第4页浏览型号74AUP1T57GM,115的Datasheet PDF文件第5页浏览型号74AUP1T57GM,115的Datasheet PDF文件第6页浏览型号74AUP1T57GM,115的Datasheet PDF文件第7页 
74AUP1T57  
Low-power configurable gate with voltage-level translator  
Rev. 5 — 15 August 2012  
Product data sheet  
1. General description  
The 74AUP1T57 provides low-power, low-voltage configurable logic gate functions. The  
output state is determined by eight patterns of 3-bit input. The user can choose the logic  
functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected  
to VCC or GND.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 2.3 V to 3.6 V.  
The 74AUP1T57 is designed for logic-level translation applications with input switching  
levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single  
2.5 V or 3.3 V supply voltage.  
The wide supply voltage range ensures normal operation as battery voltage drops from  
3.6 V to 2.3 V.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing the damaging backflow current through the device  
when it is powered down.  
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across  
the entire VCC range.  
2. Features and benefits  
Wide supply voltage range from 2.3 V to 3.6 V  
High noise immunity  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 1.5 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

与74AUP1T57GM,115相关器件

型号 品牌 描述 获取价格 数据表
74AUP1T57GM-H NXP IC,LOGIC GATE,2-IN MULTI-FUNC,CMOS,LLCC,6PIN,PLASTIC

获取价格

74AUP1T57GN NXP IC AUP/ULP/V SERIES, 3-INPUT MAJORITY LOGIC GATE, PDSO6, 0.90 X 1 MM, 0.35 MM HEIGHT, SOT-

获取价格

74AUP1T57GN NEXPERIA Low-power configurable gate with voltage-level translatorProduction

获取价格

74AUP1T57GS NEXPERIA Low-power configurable gate with voltage-level translatorProduction

获取价格

74AUP1T57GW NEXPERIA Low-power configurable gate with voltage-level translatorProduction

获取价格

74AUP1T57GW NXP Low-power configurable gate with voltage-level translator

获取价格