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74AUP1G17GF,132 PDF预览

74AUP1G17GF,132

更新时间: 2024-11-05 14:47:03
品牌 Logo 应用领域
恩智浦 - NXP PC光电二极管逻辑集成电路
页数 文件大小 规格书
20页 91K
描述
74AUP1G17 - Low-power Schmitt trigger SON 6-Pin

74AUP1G17GF,132 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC6,.04,14
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.59
Is Samacsys:N系列:AUP/ULP/V
JESD-30 代码:S-PDSO-N6JESD-609代码:e3
长度:1 mm负载电容(CL):30 pF
逻辑集成电路类型:BUFFER最大I(ol):0.0017 A
湿度敏感等级:1功能数量:1
输入次数:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC6,.04,14封装形状:SQUARE
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:20.1 ns传播延迟(tpd):20.1 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.1 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.35 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1 mm
Base Number Matches:1

74AUP1G17GF,132 数据手册

 浏览型号74AUP1G17GF,132的Datasheet PDF文件第2页浏览型号74AUP1G17GF,132的Datasheet PDF文件第3页浏览型号74AUP1G17GF,132的Datasheet PDF文件第4页浏览型号74AUP1G17GF,132的Datasheet PDF文件第5页浏览型号74AUP1G17GF,132的Datasheet PDF文件第6页浏览型号74AUP1G17GF,132的Datasheet PDF文件第7页 
74AUP1G17  
Low-power Schmitt trigger  
Rev. 03 — 10 July 2009  
Product data sheet  
1. General description  
The 74AUP1G17 provides the single Schmitt-trigger buffer. It is capable of transforming  
slowly changing input signals into sharply defined, jitter-free output signals.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The inputs switch at different points for positive and negative-going signals. The difference  
between the positive voltage VT+ and the negative voltage VTis defined as the input  
hysteresis voltage VH.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD 78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  
 
 

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