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74AUP1G17GM PDF预览

74AUP1G17GM

更新时间: 2024-11-05 04:00:55
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
20页 97K
描述
Low-power Schmitt-trigger buffer

74AUP1G17GM 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC6,.04,20
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.25
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1.45 mm
负载电容(CL):30 pF逻辑集成电路类型:BUFFER
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:20.1 ns
传播延迟(tpd):20.1 ns认证状态:Not Qualified
施密特触发器:YES座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP1G17GM 数据手册

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74AUP1G17  
Low-power Schmitt-trigger buffer  
Rev. 01 — 26 July 2005  
Product data sheet  
1. General description  
The 74AUP1G17 is a high-performance, low-power, low-voltage, Si-gate CMOS device,  
superior to most advanced CMOS compatible TTL families.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The 74AUP1G17 provides the single Schmitt-trigger buffer. It is capable of transforming  
slowly changing input signals into sharply defined, jitter-free output signals.  
2. Features  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114-C exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101-C exceeds 1000 V  
Low static power consumption; ICC = 0.9 µA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  

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