Datasheet > 6MBI100S-140

6MBI100S-140

更新时间： 2024-09-18 23:23:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率控制双极性晶体管局域网
页数	文件大小	规格书
4页	293K
描述
IGBTs

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中文翻译

获取价格

数据手册

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6MBI100S-140 数据手册

6-Pack IGBT

1400V

6MBI 100S-140

6x100A

IGBT MODULE ( S-Series )

I Outline Drawing

I Features

• NPT-Technology

• Solderable Package

• Square SC SOA at 10 x I_C

• High Short Circuit Withstand-Capability

• Small Temperature Dependence of the Turn-Off

Switching Loss

• Low Losses And Soft Switching

I Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

I Maximum Ratings and Characteristics

I Equivalent Circuit

• Absolute Maximum Ratings ( T_c=25°C)

Items

Collector-Emitter Voltage

Gate -Emitter Voltage

Symbols

V_CES

V_GES

I_C

Ratings

1400

Units

Continuous 25°C / 75°C

150 / 100

300 / 200

100

Collector

Current

1ms

25°C / 75°C

I_{C PULSE}

-I_C

-I_{C PULSE}

Continuous

1ms

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage A.C. 1min.

Screw Torque

200

P_C

700

T_j

+150

°C

T_stg

-40 ∼ +125

2500

V_is

Mounting*

3.5

Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics ( at T_j=25°C )

Items

Symbols

I_CES

Test Conditions

Min.

Typ.

Max.

1.0

200

8.5

2.7

Units

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

V_GE=0V V_CE=1400V

V_CE=0V V_GE

= 20V

I_GES

V_GE=20V I_C=100mA

V_GE=15V I_C=100A; T_j= 25°C

V_GE=15V I_C=100A; T_j=125°C

V_GE=0V

5.5

7.2

2.4

3.0

V_GE(th)

Collector-Emitter Saturation Voltage

V_CE(sat)

Input Capacitance

12000

2500

2200

0.35

0.25

0.10

0.45

0.08

C_ies

C_oes

C_res

t_ON

t_r,x

Output Capacitance

V_CE=10V

Reverse Transfer Capacitance

f=1MHz

V_CC=800V

1.2

0.6

Turn-on Time

I_C=100A

V_GE

R_G=12Ω

= 15V

t_r,i

µs

1.0

0.3

t_OFF

Turn-off Time

Inductive Load

t_f

I_F=100A; V_GE=0V; T_j= 25°C

I_F=100A; V_GE=0V; T_j=125°C

I_F=100A

2.6

2.2

3.4

Diode Forward On-Voltage

Reverse Recovery Time

V_F

t_rr

350

• Thermal Characteristics

Items

Symbols

R_th(j-c)

Test Conditions

Min.

Typ.

Max.

0.18

0.36

Units

IGBT

Thermal Resistance

Diode

°C/W

R_th(j-c)

With Thermal Compound

0.05

R_th(c-f)

12 3 4

中文翻译

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