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5962-9315402HXX

更新时间： 2024-02-23 11:12:18
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
13页 678K
描述
EEPROM Module, 128KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32

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5962-9315402HXX 技术参数

生命周期：Obsolete包装说明：DIP,
Reach Compliance Code：unknown风险等级：5.31
最长访问时间：150 ns其他特性：10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION
数据保留时间-最小值：10耐久性：10000 Write/Erase Cycles
JESD-30 代码：R-CDIP-T32内存密度：1048576 bit
内存集成电路类型：EEPROM MODULE内存宽度：8
功能数量：1端子数量：32
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-55 °C组织：128KX8
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL编程电压：5 V
认证状态：Not Qualified筛选级别：MIL-PRF-38534 Class H
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL最长写入周期时间 (tWC)：10 ms

5962-9315402HXX 数据手册

 浏览型号5962-9315402HXX的Datasheet PDF文件第6页浏览型号5962-9315402HXX的Datasheet PDF文件第7页浏览型号5962-9315402HXX的Datasheet PDF文件第8页浏览型号5962-9315402HXX的Datasheet PDF文件第10页浏览型号5962-9315402HXX的Datasheet PDF文件第11页浏览型号5962-9315402HXX的Datasheet PDF文件第12页 
WE512K8, WE256K8,  
WE128K8-XCX  
White Electronic Designs  
The page address must be the same for each byte load  
and must be valid during each high to low transition of  
WE# (or CS#). The block address also must be the same  
for each byte load and must remain valid throughout the  
WE# (or CS#) low pulse. The page and block address  
lines are summarized below:  
PAGE WRITE OPERATION  
These devices have a page write operation that allows one  
to 64 bytes of data (one to 128 bytes for the WE512K8) to  
be written into the device and then simultaneously written  
during the internal programming period. Successive bytes  
may be loaded in the same manner after the first data  
byte has been loaded. An internal timer begins a time  
out operation at each write cycle. If another write cycle  
is completed within 150μs or less, a new time out period  
begins. Each write cycle restarts the delay period. The write  
cycles can be continued as long as the interval is less than  
the time out period.  
PAGE MODE CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C  
Parameter  
Symbol  
tWC  
Min  
Max  
Unit  
ms  
ns  
Write Cycle Time, TYP = 6mS  
Data Set-up Time  
10  
tDS  
100  
10  
Data Hold Time  
tDH  
ns  
The usual procedure is to increment the least significant  
address lines from A0 through A5 (A0 through A6 for the  
WE512K8) at each write cycle. In this manner a page of  
up to 64 bytes (128 bytes for the WE512K8) can be loaded  
into the EEPROM in a burst mode before beginning the  
relatively long interval programming cycle.  
Write Pulse Width  
Byte Load Cycle Time  
Write Pulse Width High  
tWP  
150  
ns  
tBLC  
tWPH  
150  
μs  
ns  
50  
Device  
Block Address  
A17-A18  
Page Address  
A7-A16  
After the 150μs time out is completed, the EEPROM  
begins an internal write cycle. During this cycle the entire  
page of bytes will be written at the same time. The internal  
programming cycle is the same regardless of the number  
of bytes accessed.  
WE512K8-XCX  
WE256K8-XCX  
WE128K8-XCX  
A15-A17  
A6-A14  
A15-A16  
A6-A14  
FIGURE 9 – PAGE WRITE WAVEFORMS  
OE#  
CS#  
WE#  
ADDRESS (1)  
DATA  
NOTE:  
1. Decoded Address Lines must be valid for the duration of the write.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2007  
Rev. 2  
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
1...678910111213

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