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5962-9315402HXX PDF预览

5962-9315402HXX

更新时间: 2024-02-21 22:46:32
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
13页 678K
描述
EEPROM Module, 128KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32

5962-9315402HXX 技术参数

生命周期:Obsolete包装说明:DIP,
Reach Compliance Code:unknown风险等级:5.31
最长访问时间:150 ns其他特性:10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION
数据保留时间-最小值:10耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-CDIP-T32内存密度:1048576 bit
内存集成电路类型:EEPROM MODULE内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-PRF-38534 Class H
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL最长写入周期时间 (tWC):10 ms

5962-9315402HXX 数据手册

 浏览型号5962-9315402HXX的Datasheet PDF文件第5页浏览型号5962-9315402HXX的Datasheet PDF文件第6页浏览型号5962-9315402HXX的Datasheet PDF文件第7页浏览型号5962-9315402HXX的Datasheet PDF文件第9页浏览型号5962-9315402HXX的Datasheet PDF文件第10页浏览型号5962-9315402HXX的Datasheet PDF文件第11页 
WE512K8, WE256K8,  
WE128K8-XCX  
White Electronic Designs  
Data polling allows a simple bit test operation to  
determine the status of the EEPROM. During the internal  
programming cycle, a read of the last byte written will  
produce the complement of the data on I/O7. For example,  
if the data written consisted of I/O7 = HIGH, then the data  
read back would consist of I/O7 = LOW.  
DATA POLLING  
Operation with data polling permits a faster method of  
writing to the EEPROM. The actual time to complete the  
memory programming cycle is faster than the guaranteed  
maximum.  
The EEPROM features a method to determine when  
the internal programming cycle is completed. After a  
write cycle is initiated, the EEPROM will respond to read  
cycles to provide the microprocessor with the status  
of the programming cycle. The status consists of the  
last data byte written being returned with data bit I/O7  
complemented during the programming cycle, and I/O7  
true after completion.  
Apolled byte write sequence would consist of the following  
steps:  
1. write byte to EEPROM  
2. store last byte and last address written  
3. release a time slice to other tasks  
4. read byte from EEPROM - last address  
5. compare I/O7 to stored value  
a) If different, write cycle is not completed, go to  
step 3.  
b) If same, write cycle is completed, go to step 1 or  
step 3.  
DATA POLLING AC CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
Parameter  
Symbol  
512Kx8 256Kx8  
128Kx8  
Unit  
Min  
10  
Max  
Min  
0
Max  
Min  
0
Max  
Data Hold Time  
tDH  
tOEH  
tOE  
ns  
ns  
ns  
ns  
Output Enable Hold Time  
Output Enable To Output Delay  
Write Recovery Time  
10  
0
0
100  
100  
100  
tWR  
0
0
0
FIGURE 8 – DATA POLLING WAVEFORMS  
WE1-4  
CS1-4  
#
#
OE#  
I/O7  
ADDRESS  
White Electronic Designs Corp. reserves the right to change products or specications without notice.  
March 2007  
Rev. 2  
8
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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