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5962-9315402HXX PDF预览

5962-9315402HXX

更新时间: 2024-02-15 22:00:36
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
13页 678K
描述
EEPROM Module, 128KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32

5962-9315402HXX 技术参数

生命周期:Obsolete包装说明:DIP,
Reach Compliance Code:unknown风险等级:5.31
最长访问时间:150 ns其他特性:10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION
数据保留时间-最小值:10耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-CDIP-T32内存密度:1048576 bit
内存集成电路类型:EEPROM MODULE内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-PRF-38534 Class H
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL最长写入周期时间 (tWC):10 ms

5962-9315402HXX 数据手册

 浏览型号5962-9315402HXX的Datasheet PDF文件第2页浏览型号5962-9315402HXX的Datasheet PDF文件第3页浏览型号5962-9315402HXX的Datasheet PDF文件第4页浏览型号5962-9315402HXX的Datasheet PDF文件第6页浏览型号5962-9315402HXX的Datasheet PDF文件第7页浏览型号5962-9315402HXX的Datasheet PDF文件第8页 
WE512K8, WE256K8,  
WE128K8-XCX  
White Electronic Designs  
READ  
Figure 5 shows Read cycle waveforms. A read cycle begins  
places the selected data byte on I/O0 through I/O7 after the  
access time. The output of the memory is placed in a high  
impedance state shortly after either the OE# line or CS# line  
is returned to a high level.  
with selection address, chip select and output enable. Chip  
select is accomplished by placing the CS# line low. Output  
enable is done by placing the OE# line low. The memory  
FIGURE 5 – READ WAVEFORMS  
ADDRESS  
CS#  
OE#  
OUTPUT  
NOTE:  
OE# may be delayed up to tACS-tOE after the falling edge of CS# without impact on tOE  
or by tACC-tOE after an address change without impact on tACC.  
AC READ CHARACTERISTICS (See Figure 5)  
FOR WE512K8-XCX  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
-150  
-200  
-250  
-300  
Parameter  
Symbol  
Unit  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Read Cycle Time  
trc  
tacc  
tacs  
toh  
toe  
tdf  
150  
200  
250  
300  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
150  
150  
200  
200  
250  
250  
300  
300  
Chip Select Access Time  
Output Hold from Address Change, OE# or CS#  
Output Enable to Output Valid  
Chip Select or Output Enable to High Z Output  
0
0
0
0
85  
70  
85  
70  
100  
70  
125  
70  
FOR WE256K8-XCX and WE128K8-XCX  
-150  
-200  
Parameter  
Symbol  
Unit  
Min  
Max  
Min  
Max  
Read Cycle Time  
trc  
tacc  
tacs  
toh  
toe  
tdf  
150  
200  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
150  
150  
200  
200  
Chip Select Access Time  
Output Hold from Address Change, OE# or CS#  
Output Enable to Output Valid  
Chip Select or Output Enable to High Z Output  
0
0
85  
70  
85  
70  
White Electronic Designs Corp. reserves the right to change products or specications without notice.  
March 2007  
Rev. 2  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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