Datasheet > 5962-931552HYX

5962-931552HYX

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
玛居礼 - MERCURY		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
14页	1258K
描述
EEPROM

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5962-931552HYX 数据手册

WE512K8, WE256K8,

WE128K8-XCX

512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091

512Kx8 BIT CMOS EEPROM MODULE

FEATURES

 Read Access Times of 150, 200, 250, 300ns

 Automatic Page Write Operation

 JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package

• Internal Address and Data Latches for

• 512 Bytes, 1 to 128 Bytes/Row, Four Pages

 Page Write Cycle Time 10mS Max.

 Data Polling for End of Write Detection

 Hardware and Software Data Protection

 TTL Compatible Inputs and Outputs

300)

 Commercial, Industrial and Military Temperature Ranges

 MIL-STD-883 Compliant Devices Available

 Write Endurance 10,000 Cycles

 Data Retention at 25°C, 10 Years

 Low Power CMOS Operation:

• 3mA Standby Typical/100mA Operating Maximum

FIGURE 1 – PIN CONFIGURATION

TOP VIEW

PIN DESCRIPTION

A0-18

I/O0-7

CS#

OE#

WE#

V_CC

Address Inputs

Data Input/Output

Chip Select

Output Enable

Write Enable

+5.0V Power

Ground

A18

A16

A15

A12

V_CC

WE#

A17

A14

A13

V_SS

BLOCK DIAGRAM

A_0-16

I/O_0-7

A11

OE#

A10

CS#

I/O7

I/O6

I/O5

I/O4

I/O3

WE#

OE#

128K x 8

I/O0

I/O1

I/O2

V_SS

A₁₇

A₁₈

Decoder

CS#

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 4

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

12 3 4 5 6 7...14

下载PDF

与5962-931552HYX相关器件

型号	品牌	描述	获取价格	数据表
5962-9315601HXA	ETC	x8 SRAM Module	获取价格
5962-9315601HXC	ETC	x8 SRAM Module	获取价格
5962-9315601HYA	ETC	x8 SRAM Module	获取价格
5962-9315601HYC	ETC	x8 SRAM Module	获取价格
5962-9315602HXA	ETC	x8 SRAM Module	获取价格
5962-9315602HXC	ETC	x8 SRAM Module	获取价格