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5962-931552HYX PDF预览

5962-931552HYX

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
玛居礼 - MERCURY 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 1258K
描述
EEPROM

5962-931552HYX 数据手册

 浏览型号5962-931552HYX的Datasheet PDF文件第1页浏览型号5962-931552HYX的Datasheet PDF文件第2页浏览型号5962-931552HYX的Datasheet PDF文件第3页浏览型号5962-931552HYX的Datasheet PDF文件第5页浏览型号5962-931552HYX的Datasheet PDF文件第6页浏览型号5962-931552HYX的Datasheet PDF文件第7页 
WE512K8, WE256K8,  
WE128K8-XCX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Operating Temperature  
Storage Temperature  
Signal Voltage Any Pin  
Voltage on OE# and A9  
Symbol  
TA  
TSTG  
VG  
Unit  
°C  
°C  
V
V
CS#  
H
OE#  
X
WE#  
X
Mode  
Data I/O  
High Z  
-55 to +125  
-65 to +150  
-0.6 to + 6.25  
-0.6 to +13.5  
28  
Standby  
Read  
L
L
H
Data Out  
L
H
L
Write  
Data In  
X
H
X
Out Disable  
Write  
High Z/Data Out  
Thermal Resistance junction to case  
Lead Temperature (soldering -10 secs)  
JC  
°C/W  
°C  
X
X
H
+300  
X
L
X
Inhibit  
NOTE:  
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this specication is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
CAPACITANCE  
TA = +25°C  
RECOMMENDED OPERATING CONDITIONS  
512Kx8 256Kx8 128Kx8  
Parameter  
Sym  
Condition  
Unit  
Max  
Max  
Max  
Parameter  
Supply Voltage  
Symbol  
VCC  
VIH  
Min  
4.5  
2.0  
-0.3  
-55  
-40  
Max  
5.5  
Unit  
V
Input Capacitance  
CIN  
VIN = 0V, f = 1MHz  
45  
80  
45  
pF  
pF  
Input High Voltage  
Input Low Voltage  
VCC + 0.3  
+0.8  
V
V
°C  
°C  
Output Capacitance COUT VI/O = 0V, f = 1MHz  
This parameter is guaranteed by design but not tested.  
60  
80  
60  
VIL  
Operating Temp. (Mil.)  
Operating Temp. (Ind.)  
TA  
TA  
+125  
+85  
DC CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
512K x 8  
Typ  
256K x 8  
Typ  
128K x 8  
Typ  
Parameter  
Symbol  
Conditions  
Unit  
Min  
Max Min  
10  
10  
100  
8
0.45  
2.4  
Max Min  
10  
10  
90  
6
Max  
10  
10  
90  
4
Input Leakage Current  
Output Leakage Current  
Dynamic Supply Current  
Standby Current  
Output Low Voltage  
Output High Voltage  
ILI  
ILO  
ICC  
ISB  
VOL  
VOH  
VCC = 5.5, VIN = GND to VCC  
μA  
μA  
mA  
mA  
V
CS# = VIH, OE# = VIH, Vout = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5  
IOL = 2.1mA, VCC = 4.5V  
80  
3
60  
2
50  
1
0.45  
2.4  
0.45  
IOH = -400μA, VCC = 4.5V  
2.4  
V
NOTE: DC test conditions: Vih = Vcc -0.3V, Vil = 0.3V  
FIGURE 4 – AC TEST CIRCUIT  
AC TEST CONDITIONS  
Parameter  
Typ  
VIL = 0, VIH = 3.0  
Unit  
V
Input Pulse Levels  
Input Rise and Fall  
5
ns  
V
Input and Output Reference Level  
Output Timing Reference Level  
Notes: VZ is programmable from -2V to +7V.  
1.5  
1.5  
V
I
OL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75Ω.  
VZ is typically the midpoint of VOH and VOL  
.
IOL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 4  
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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