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3SK206-U

更新时间： 2024-09-17 13:04:35
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器晶体管场效应晶体管电视栅
页数 文件大小 规格书
6页 59K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4

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3SK206-U 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：unknown
HTS代码：8541.21.00.75风险等级：5.84
配置：SINGLE最大漏极电流 (ID)：0.08 A
FET 技术：METAL SEMICONDUCTOR最大反馈电容 (Crss)：0.035 pF
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G4
元件数量：1端子数量：4
工作模式：DUAL GATE, DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最小功率增益 (Gp)：16 dB认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

3SK206-U 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK206  
RF AMP. FOR UHF TV TUNER  
N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR  
4PIN MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
•
•
•
•
Suitable for use as RF amplifier in UHF TV tuner.  
in millimeters  
Low Crss:  
High GPS:  
Low NF:  
0.02 pF TYP.  
20 dB TYP.  
1.1 dB TYP.  
+0.2  
2.8  
–0.3  
+0.2  
–0.1  
1.5  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
ID  
10  
V
V
–4.5  
–4.5  
V
80  
mA  
mW  
°C  
°C  
5 °  
5 °  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
200  
Tch  
125  
Tstg  
–55 to +125  
5 °  
5 °  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
SYMBOL  
MIN.  
10  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
Drain to Source Breakdown  
Voltage  
BVDSX  
VG1S = –4 V, VG2S = 0, ID = 20 µA  
Drain Current  
IDSS  
10  
80  
–3.5  
–3.5  
10  
mA  
V
VDS = 5 V, VG1S = 0, VG2S = 0  
VDS = 5 V, VG2S = 0, ID = 100 µA  
VDS = 5 V, VG1S = 0, ID = 100 µA  
VDS = 0, VG1S = –4 V, VG2S = 0  
VDS = 0, VG2S = –4 V, VG1S = 0  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
Gate2 Reverse Current  
Forward Transfer Admittance  
VG1S(off)  
VG2S(off)  
IG1SS  
V
µA  
µA  
mS  
IG2SS  
10  
| yfs |  
25  
35  
VDS = 5 V, VG2S = 1 V, ID = 10 mA,  
f = 1.0 kHz  
Input Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Crss  
GPS  
NF  
1.0  
1.5  
0.02  
20.0  
1.1  
2.0  
pF  
pF  
dB  
dB  
VDS = 5 V, VG2S = 1 V, ID = 10 mA,  
f = 1.0 MHz  
0.035  
16.0  
VDS = 5 V, VG2S = 1 V, ID = 10 mA,  
f = 900 MHz  
Noise Figure  
2.5  
IDSS Classification (Unit: mA)  
Class  
Marking  
IDSS  
U76  
U76  
U77  
U77  
U78  
U79  
U78  
U79  
10 to 25  
20 to 35  
30 to 50  
45 to 80  
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage  
due to those voltage or fields.  
Document No. P10568EJ2V0DS00 (2nd edition)  
(Previous No. TC-2134)  
Date Published August 1995 P  
Printed in Japan  
1987  
©
123456

中文翻译

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