生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.27 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | SINGLE | 最大漏极电流 (ID): | 0.035 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 0.03 pF |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 16 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK189 | SANYO |
获取价格 |
UHF Amp,Mixer Applications | |
3SK191 | ETC |
获取价格 |
||
3SK192 | PANASONIC |
获取价格 |
RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Met | |
3SK192H | PANASONIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK194 | HITACHI |
获取价格 |
Silicon N-Channel Dual Gate MOS FET | |
3SK194IY | HITACHI |
获取价格 |
暂无描述 | |
3SK194IY-TL | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK194IY-UL | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK194IY-UR | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK195 | TOSHIBA |
获取价格 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER ,FM TUNER APPLICATIONS) |