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3SK186FI-UR PDF预览

3SK186FI-UR

更新时间: 2024-09-17 20:33:27
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
4页 102K
描述
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4

3SK186FI-UR 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.75风险等级:5.27
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最大漏极电流 (ID):0.035 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):0.03 pF
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DUAL GATE, ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):16 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

3SK186FI-UR 数据手册

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