生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 15 V | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 25 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK206 | NEC |
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RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MO | |
3SK206-U | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK206-U77 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK206-U78 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK206-U79 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK207 | TOSHIBA |
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N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) | |
3SK207TE85L | TOSHIBA |
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TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK212 | ROHM |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK212R | ROHM |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK212S | ROHM |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |