Datasheet > 3SK196

3SK196

更新时间： 2024-11-07 20:21:51

品牌	Logo	应用领域
日立 - HITACHI		放大器光电二极管晶体管
页数	文件大小	规格书
6页	533K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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3SK196 数据手册

3SK196

Silicon N Channel Dual Gate MOS FET

VHF/UHF TV Tuner RF Amplifier

Features

MPAK-4

• Compact package.

• Low noise amplifier for VHF to UHF band,

capable of RF amplifier for CATV wide band

tuner.

Table 1 Absolute Maximum Ratings

(Ta = 25°C)

Item

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Drain to source voltage 12

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Gate 1 to source voltage ±10

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Gate 2 to source voltage ±10

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Drain current 35 mA

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Channel power dissipation Pch 150 mW

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Channel temperature Tch 125 °C

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Storage temperature Tstg –55 to +125 °C

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Symbol Rating

Unit

1. Source

2. Gate 1

3. Gate 2

4. Drain

G1S

G2S

12 3 4 5 6

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