型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK197WI | RENESAS |
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Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Met | |
3SK199 | TOSHIBA |
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N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) | |
3SK199TE85L | TOSHIBA |
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TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK199TE85R | TOSHIBA |
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TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK200 | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK200H | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK202 | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK206 | NEC |
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RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MO | |
3SK206-U | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK206-U77 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |