2SK711-GR

更新时间： 2024-09-16 12:58:43

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
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中文翻译

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数据手册

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2SK711-GR 数据手册

2SK711

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK711

High Frequency Amplifier Applications

Unit: mm

AM High Frequency Amplifier Applications

Audio Frequency Amplifier Applications

•

High |Y |: |Y | = 25 mS (typ.)

fs fs

Low C : C = 7.5 pF (typ.)

iss iss

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−20

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

150

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

TO-236MOD

SC-59

TOSHIBA

2-3F1B

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −15 V, V

= 0 V

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0 V, I = −100 μA

−20

⎯

(BR) GDS

DSS

(Note)

Drain current

= 5 V, V

= 0 V

⎯

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 5 V, I = 1 μA

⎯

7.5

−2.5

⎯

GS (OFF)

⎪Y ⎪

= 5 V, V

= 0 V, f = 1 kHz

= 0 V, f = 1 MHz

iss

rss

Reverse transfer capacitance

= 5 V, I = 0 mA, f = 1 MHz

Note: I

classification

DSS

GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA

(G)

) ...... I

(L)

(V)

(

rank marking

DSS

2007-11-01

12 3 4 5

中文翻译

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