2SK715
N-Channel JFET
15V, 7.3 to 24mA, 50mS
www.onsemi.com
Applications
•
AM Tuner RF Amp, Low-noise Amp
•
HF Low-noise Amp
Features
Electrical Connection Marking
ꢀ
ꢀ
ꢀ
•
•
•
Adoption of FBET Process
Large yfs
Small Ciss
2
1 : Source
2 : Gate
3 : Drain
K715
LOT No.
ꢀ
•
Very Low Noise Figure
Specifications
at Ta=25°C
1
3
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Symbol
Ratings
Unit
V
V
V
I
15
--15
10
DSS
V
GDS
2SK715U-AC
2SK715V-AC
2SK715W-AC
mA
mA
mW
G
Drain Current
I
50
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
300
125
D
Tj
C
C
TO-92-3 / SPA-WA
°
°
Tstg
--55 to +125
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--15
max
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
V
I
=-- 10 A, V =0V
DS
=--10V, V =0V
V
m
(BR)GDS
G
I
I
V
V
V
--1.0
nA
mA
V
GSS
GS
DS
DS
DS
*
=5V, V =0V
7.3*
25
24.0*
--1.4
DSS
GS
=5V, I =100 A
V
(off)
--0.6
50
m
GS
yfs
D
Forward Transfer Admittance
Input Capacitance
V
=5V, V =0V, f=1kHz
GS
mS
pF
pF
dB
|
|
DS
Ciss
Crss
10
V
=5V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
Noise Figure
3.0
1.5
V
=5V, R =1k , I =1mA, f=1kHz
Ω
g D
NF
DS
ꢀ:ꢀTheꢀ2SK715ꢀisꢀclassifiedꢀbyꢀI
as follows : (unit : mA)
V
*
DSS
Rank
U
W
I
7.3 to 12.0
10.0 to 17.0
14.5 to 24.0
DSS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
Publication Order Number :
1
March 2015 - Rev. 1
2SK715/D